• DocumentCode
    2455112
  • Title

    22nm CMOS approaches by PVD TiN or Ti-Silicide as metal gate

  • Author

    Liu, C.S. ; Boccardi, G. ; Wang, H.Y. ; Lin, C.T. ; Petry, J. ; Müller, M. ; Li, Z. ; Zhao, C. ; Yu, C.H.

  • Author_Institution
    TSMC, Hsinchu, Taiwan
  • fYear
    2009
  • fDate
    27-29 April 2009
  • Firstpage
    63
  • Lastpage
    64
  • Abstract
    Two SMSD gate first planar CMOS devices were demonstrated. Vtn/Vtp= +0.49V/-0.48V were achieved by adjusting TiN to p-like metal and As I/I on nMOS. This enables the equivalent +/-0.2V low Vt target of N22 fully depleted CMOS technologies. Vtn/Vtp= 0.52/-0.55 were obtained by transforming PVD-TiN/Ti into n-like metal TiN/TiSix for nMOS and by Al I/I on TiN/Ti for pMOS. Al diffusion was facilitated by snowplow effect of TiSix formation on pMOS. As low as 7.3A EOT with decent Jg 6.4E-3 A/cm2 @ 1.1Vwas obtained.
  • Keywords
    CMOS integrated circuits; integrated circuit manufacture; titanium compounds; vapour deposition; CMOS approaches; PVD; SMSD; TiN; metal gate; wavelength 22 nm; Amorphous materials; Atherosclerosis; Dielectrics; Doping; Hafnium oxide; Ion implantation; MOS devices; Manufacturing processes; Pulp manufacturing; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-2784-0
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2009.5159292
  • Filename
    5159292
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2455112