Title :
High performance metal/insulator/metal capacitors using HfTiO as dielectric
Author :
Hsu, Hsiao-Hsuan ; Cheng, Chun-Hu ; Tsui, Bing-Yue
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4times10-8 A/cm2 at -1 V and high capacitance density of 17.5 fF/mum2 were obtained. A N2-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient of capacitance (VCC) properties. Capacitance density of 5.1 fF/mum2, leakage current of 1.3times10-9 A/cm2, and parabolic VCC value of 40 ppm/V2 can be achieved by 51 nm thick HfTiO film. These results meet the RF/analog requirements in 2012 predicted by ITRS.
Keywords :
MIM devices; analogue circuits; capacitors; dielectric materials; hafnium compounds; leakage currents; plasma applications; radiofrequency integrated circuits; thick films; titanium compounds; HfTiO; MIM capacitor; N2; RF-analog IC application; high capacitance density; high performance metal-insulator-metal capacitor; low leakage current; plasma treatment; size 51 nm; voltage -1 V; voltage coefficient of capacitance properties; Capacitance; Degradation; Dielectrics and electrical insulation; Hafnium; Leakage current; MIM capacitors; Metal-insulator structures; Radio frequency; Titanium compounds; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2009.5159294
