DocumentCode :
2455303
Title :
A study of correlation between CiOi defects and dynamic avalanche phenomenon of PiN diode using He ion irradiation
Author :
Niwa, F. ; Misumi, T. ; Yamazaki, S. ; Sugiyama, T. ; Kanata, T. ; Nishiwaki, K.
Author_Institution :
Electron. Eng. Div. III, Toyota Motor Corp., Toyota
fYear :
2008
fDate :
15-19 June 2008
Firstpage :
82
Lastpage :
84
Abstract :
Our previous research has shown that dynamic avalanche phenomenon is related to the hole trap level that is induced at an energy level of Ev+0.35 eV. In this study we will describe how we used the DLTS (deep level transient spectroscopy) method and CL (cathode luminescence) method to identify that the defects which form the hole trap level are in fact CiOi that is present in the Si wafer. We fabricated diodes using wafers with different amounts of CiOi, and conducted tests for the occurrence of the dynamic avalanche phenomenon. The results verified that the dynamic avalanche phenomenon occurs in diodes with large amounts of CiOi. By controlling the impurities in the Si wafer, we were able to improve the diode characteristics and suppress oscillation of the IGBT module current and voltage waveforms, reducing switching loss.
Keywords :
avalanche diodes; cathodoluminescence; deep level transient spectroscopy; defect states; elemental semiconductors; hole traps; ion beam effects; p-i-n diodes; radiation hardening (electronics); silicon; CiOi defect; DLTS; He ion irradiation; PiN diode; cathode luminescence; deep level transient spectroscopy; dynamic avalanche phenomenon; hole trap level; Cathodes; Diodes; Energy states; Helium; Impurities; Insulated gate bipolar transistors; Luminescence; Spectroscopy; Testing; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 2008. PESC 2008. IEEE
Conference_Location :
Rhodes
ISSN :
0275-9306
Print_ISBN :
978-1-4244-1667-7
Electronic_ISBN :
0275-9306
Type :
conf
DOI :
10.1109/PESC.2008.4591902
Filename :
4591902
Link To Document :
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