Design and characteristics of reverse conducting 10-kV-IGCTs

Author

Tschirley, Sven ; Bernet, Steffen ; Streit, Peter

Author_Institution

Berlin Univ. of Applies Sci., Berlin

fYear

2008

fDate

15-19 June 2008

Firstpage

92

Lastpage

97

Abstract

The integration of a 10-kV-IGCT and a fast diode in one press pack is a very attractive solution for medium voltage converters in a voltage range of 6 kV - 7.2 kV if the converter power rating does not exceed about 5 - 6 MVA. This paper describes the design and characterization of the world first reverse conducting 68 mm 10-kV-IGCTs. On-state-, blocking and switching behaviour of different IGCT and diode samples are investigated experimentally. The experimental results clearly show, that 10-kV-RC-IGCTs are an attractive power semiconductor for 6 - 7.2 kV medium voltage converters.

Keywords

power convertors; power semiconductor diodes; thyristors; IGCT; diode samples; medium voltage converters; power semiconductor; reverse conducting; size 68 mm; switching behaviour; voltage 10 kV; voltage 6 kV to 7.2 kV; HVDC transmission; Insulated gate bipolar transistors; Medium voltage; Power semiconductor switches; Pulse width modulation; Pulse width modulation converters; Rail transportation; Semiconductor diodes; Switching converters; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2008. PESC 2008. IEEE

Conference_Location

Rhodes

ISSN

0275-9306

Print_ISBN

978-1-4244-1667-7

Electronic_ISBN

0275-9306

Type

conf

DOI

10.1109/PESC.2008.4591905

Filename

4591905