• DocumentCode
    2455384
  • Title

    Highly performant FDSOI pMOSFETs with metallic source/drain

  • Author

    Poiroux, T. ; Vinet, M. ; Nemouchi, F. ; Carron, Y. ; Morand, Yves ; Previtali, B. ; Descombes, S. ; Tosti, L. ; Cueto, O. ; Baud, L. ; Balan, V. ; Rivoire, M. ; Deleonibus, S. ; Faynot, O.

  • Author_Institution
    CEA-LETI/Minatec, Grenoble, France
  • fYear
    2009
  • fDate
    27-29 April 2009
  • Firstpage
    88
  • Lastpage
    89
  • Abstract
    We report in this paper the fabrirication and the characterirization of FDSOI pMOSFETs with metallic source and drain exhibiting the best performance obtained so far on metallic source/drain devices, with Ion=345 nA/mum and Ioff=30 nA/mum at -1 V for a 50 nm gate length device. These results have been achieved thanks to a careful optimization of the source/drain to channel contacts, which can allow specifific contact resistivities as low as 0.1 Omegam2.
  • Keywords
    MOSFET; silicon-on-insulator; FDSOI pMOSFET; metallic source-drain; size 50 nm; voltage -1 V; MOSFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-2784-0
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2009.5159304
  • Filename
    5159304
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2455384