DocumentCode :
2455429
Title :
NGL Overview
Author :
Lin, Burn
Author_Institution :
TSMC, Taiwan
fYear :
2009
fDate :
27-29 April 2009
Firstpage :
94
Lastpage :
94
Abstract :
ArF water-immersion lithography supports 1.35 NA or slightly higher but cannot reach the theoretical limit of 1.44 NA. It is increasing difficult to resolve half pitches below k1=(HP/λ)*NA=0.28, i.e. 40-nm half pitch.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu, Taiwan
ISSN :
1524-766X
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
Type :
conf
DOI :
10.1109/VTSA.2009.5159306
Filename :
5159306
Link To Document :
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