Title :
A physics-based compact model of quantum-mechanical effects for thin cylindrical Si-Nanowire MOSFETs
Author :
Cousin, Bastian ; Rozeau, O. ; Jaud, Marie-Anne ; Jomaah, Jalal
Author_Institution :
LETI, MINATEC, Grenoble, France
Abstract :
Since we know that quantum-mechanical effects are predominant in surrounding-gate MOSFETs, a model should be developed. For the first time, this paper presents an analytic model of quantization for thin cylindrical Si-nanowire MOSFETs by using a variational approach. The model is implemented into a surface potential like model. It is shown that results agree with the numerical simulations.
Keywords :
MOSFET; nanowires; physics-based compact model; quantum-mechanical effects; surface potential; surrounding-gate MOSFET; thin cylindrical Si-nanowire MOSFET; Decision support systems; MOSFETs; Quadratic programming; Virtual reality;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2009.5159313
