• DocumentCode
    2455564
  • Title

    A physics-based compact model of quantum-mechanical effects for thin cylindrical Si-Nanowire MOSFETs

  • Author

    Cousin, Bastian ; Rozeau, O. ; Jaud, Marie-Anne ; Jomaah, Jalal

  • Author_Institution
    LETI, MINATEC, Grenoble, France
  • fYear
    2009
  • fDate
    27-29 April 2009
  • Firstpage
    107
  • Lastpage
    108
  • Abstract
    Since we know that quantum-mechanical effects are predominant in surrounding-gate MOSFETs, a model should be developed. For the first time, this paper presents an analytic model of quantization for thin cylindrical Si-nanowire MOSFETs by using a variational approach. The model is implemented into a surface potential like model. It is shown that results agree with the numerical simulations.
  • Keywords
    MOSFET; nanowires; physics-based compact model; quantum-mechanical effects; surface potential; surrounding-gate MOSFET; thin cylindrical Si-nanowire MOSFET; Decision support systems; MOSFETs; Quadratic programming; Virtual reality;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-2784-0
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2009.5159313
  • Filename
    5159313
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2455564