Title :
A novel double-gated nanowire TFT and investigation of its size dependency
Author :
Chen, Wei-Chen ; Lin, Chuan-Ding ; Lin, Horng-Chih ; Huang, Tiao-Yuan
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A simple method for fabricating poly-Si nanowire (NW) TFT with multiple gates is proposed and characterized. In this structure, NW is formed mainly using both anisotropic and highly selective isotropic plasma etching. It is found that when the size of NW is scaled down, double-gated operation provides more improvement. Furthermore, by utilizing this unique independent double-gated configuration, the function of threshold voltage modulation is investigated.
Keywords :
elemental semiconductors; nanowires; plasma magnetohydrodynamics; plasma materials processing; semiconductor quantum wires; silicon; thin film transistors; Si; double-gated nanowire TFT; isotropic plasma etching; thin film transistor; threshold voltage modulation; Anisotropic magnetoresistance; Displays; Etching; Laboratories; Nanoscale devices; Plasma applications; Plasma devices; Textile industry; Thin film transistors; Threshold voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2009.5159320
