Influence of gate misalignment on the electrical characteristics of MuGFETs

This work studies the influence of gate misalignment on the electrical properties of MuGFETs using both measurements and 3D simulations. Electrical characteristics such as a DIBL, V_th and drain breakdown voltage are shown to be dependent on the gate misalignment due to the resulting change in fin width. Devices that have a Widening of the fin at the Drain side (DW) decreased due to weakening of gate control. Widening of the fin at the Source (SW), however, does not alter the device characteristics.