DocumentCode
2455795
Title
Sub-100µW low power operation of Vibrating Body FETs
Author
Grogg, Daniel ; Ionescu, Adrian Mihai
Author_Institution
Nanoelectronic Devices Lab. (Nanolab), Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
fYear
2009
fDate
27-29 April 2009
Firstpage
129
Lastpage
130
Abstract
This paper reports the low power operation of Vibrating Body Field Effect Transistors as active resonators for communication applications. For the first time we report active resonators operating at 2 MHz and 20 MHz with power consumption less than 100 muW and Quality factors in the order of 3000. This performance opens new applications of devices for wireless sensor networks.
Keywords
Q-factor; field effect transistors; low-power electronics; wireless sensor networks; active resonators; frequency 2 MHz; frequency 20 MHz; quality factor; vibrating body field effect transistors; wireless sensor networks; Electrical resistance measurement; Energy consumption; FETs; Impedance; Nanoscale devices; Q factor; Resonance; Resonant frequency; Vibrations; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
978-1-4244-2784-0
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2009.5159324
Filename
5159324
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