Title :
High mobility SiGe shell-Si core omega gate pFETS
Author :
Adhikari, Hemant ; Harris, Harlan R. ; Smith, Casey E. ; Yang, Ji-Woon ; Coss, Brian ; Parthasarathy, Srivatsan ; Nguyen, Bich-yen ; Patruno, Paul ; Krishnamohan, Tejas ; Cayrefourcq, Ian ; Majhi, Prashant ; Jammy, Raj
Author_Institution :
AMD assignee, Austin, TX, USA
Abstract :
Omega gate type pFETs with SiGe shell-Si core are demonstrated that show 30% mobility enhancement for (110) oriented fins and 46% mobility enhancement for (100) oriented fins compared to Si omega gate devices. Performance improvement is demonstrated because of higher mobility and inherent epitaxial strain, while the external resistance in the two SiGe and Si omega FETs is comparable. Performance can further be improved by uniaxial compressive stress.
Keywords :
Ge-Si alloys; field effect transistors; semiconductor materials; SiGe; epitaxial strain; external resistance; high mobility core omega gate pFET; uniaxial compressive stress; Compressive stress; Dielectric substrates; FETs; FinFETs; Germanium silicon alloys; Jamming; MOSFETs; Scattering; Silicon germanium; Very large scale integration;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2009.5159327
