Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3 and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics

Author

Chiu, H.C. ; Lin, T.D. ; Chang, P. ; Lee, W.C. ; Chiang, C.H. ; Kwo, J. ; Lin, Y.S. ; Hsu, Shawn S H ; Tsai, W. ; Hong, M.

Author_Institution

Dept of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2009

fDate

27-29 April 2009

Firstpage

141

Lastpage

142

Abstract

Self-aligned inversion-channel In_0.53Ga_0.47As n-MOSFETs with ex-situ atomic-layer-deposited Al₂O₃ and in-situ ultra-high-vacuum deposited Al₂O₃/Ga₂O₃(Gd₂O₃) as gate dielectrics have been demonstrated. Both devices exhibit excellent DC characteristics, including high drain currents and transconductances. In addition, RF characteristics of both devices were analyzed; without using any isolation, non dc-embedded current gain cutoff frequency (f_T) and maximum oscillation frequency (f_max) of ~ 3.1 and 1.1 GHz (ALD-Al₂O₃) and of ~ 17.9 and 11.2 GHz (MBE-Al₂O₃/Ga₂O₃(Gd₂O₃)), respectively, have been obtained.

Keywords

III-V semiconductors; MOSFET; alumina; gadolinium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; In_0.53Ga_0.47As-Al₂O₃-Ga₂O₃; N-MOSFETs; dc-embedded current gain cutoff frequency; drain currents; gate dielectrics; self-aligned inversion channel; transconductances; Aluminum oxide; Atomic layer deposition; Cutoff frequency; Dielectric materials; Epitaxial growth; Intrusion detection; MOSFET circuits; Molecular beam epitaxial growth; Physics; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-2784-0

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2009.5159329

Filename

5159329