Title :
Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts
Author :
Chin, Hock-Chun ; Liu, Xinke ; Tan, Leng-Seow ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
Abstract :
We report the first demonstration of a surface channel inversion-type In0.53Ga0.47As n-MOSFET featuring gold-free palladium-germanium (PdGe) ohmic contacts and self-aligned S/D formed by silicon and phosphorus co-implantation. A gate stack comprising TaN/HfAlO/In0.53Ga0.47As is also featured. Excellent transistor output characteristics with high drain current on/off ratio of 104, high peak electron mobility of 1420 cm2/Vs and peak transconductance of 142 mS/mm at gate length of 2 mum were demonstrated. In addition, the integration of low resistance PdGe ohmic contacts on In0.53Ga0.47As alleviates contamination concerns associated with the common use of gold-based contacts on In0.53Ga0.47As.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOSFET; gallium arsenide; gallium compounds; germanium alloys; indium compounds; ohmic contacts; palladium alloys; In0.53Ga0.47As; electron mobility; metal-oxide-semiconductor field-effect transistors; palladium-germanium ohmic contacts; size 2 mum; transconductance; CMOS technology; Contact resistance; Electron mobility; III-V semiconductor materials; Indium gallium arsenide; MOSFET circuits; Ohmic contacts; Silicon; Surface resistance; Transconductance;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2009.5159330
