Sub-100nm high-K metal gate GeOI pMOSFETs performance: Impact of the Ge channel orientation and of the source injection velocity

Author

Le Royer, C. ; Pouydebasque, A. ; Romanjek, K. ; Barral, V. ; Vinet, M. ; Hartmann, J.-M. ; Augendre, E. ; Grampeix, H. ; Lachal, L. ; Tabone, C. ; Previtali, B. ; Truche, R. ; Allain, F.

Author_Institution

LETI, MINATEC, Grenoble, France

fYear

2009

fDate

27-29 April 2009

Firstpage

145

Lastpage

146

Abstract

We report here experimental investigations on GeOI pMOSFET: Besides the +65% mobility enhancement in narrow channel GeOI pMOSFETs as compared to wide channels, attributed to improved sidewall transport properties, <100> channel orientation transport is investigated for the first time in Ge (001): unlike Si, no current gain is observed compared to <110> channel orientation. Finally, ballisticity rates (BR) and source injection velocities (v_inj) were extracted, demonstrating 22% higher v_inj in Ge than in Si.

Keywords

MOSFET; elemental semiconductors; germanium; Ge; channel orientation transport; germanium-on-insulator pMOSFET; sidewall transport properties; source injection velocity; Capacitive sensors; Electronic mail; Fabrication; Germanium; High K dielectric materials; High-K gate dielectrics; Implants; MOSFETs; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-2784-0

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2009.5159331

Filename

5159331