DocumentCode :
2455905
Title :
Sub-100nm high-K metal gate GeOI pMOSFETs performance: Impact of the Ge channel orientation and of the source injection velocity
Author :
Le Royer, C. ; Pouydebasque, A. ; Romanjek, K. ; Barral, V. ; Vinet, M. ; Hartmann, J.-M. ; Augendre, E. ; Grampeix, H. ; Lachal, L. ; Tabone, C. ; Previtali, B. ; Truche, R. ; Allain, F.
Author_Institution :
LETI, MINATEC, Grenoble, France
fYear :
2009
fDate :
27-29 April 2009
Firstpage :
145
Lastpage :
146
Abstract :
We report here experimental investigations on GeOI pMOSFET: Besides the +65% mobility enhancement in narrow channel GeOI pMOSFETs as compared to wide channels, attributed to improved sidewall transport properties, <100> channel orientation transport is investigated for the first time in Ge (001): unlike Si, no current gain is observed compared to <110> channel orientation. Finally, ballisticity rates (BR) and source injection velocities (vinj) were extracted, demonstrating 22% higher vinj in Ge than in Si.
Keywords :
MOSFET; elemental semiconductors; germanium; Ge; channel orientation transport; germanium-on-insulator pMOSFET; sidewall transport properties; source injection velocity; Capacitive sensors; Electronic mail; Fabrication; Germanium; High K dielectric materials; High-K gate dielectrics; Implants; MOSFETs; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
Type :
conf
DOI :
10.1109/VTSA.2009.5159331
Filename :
5159331
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2455905
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