Application and analysis of thermosensitive parameters in the case of hybrid power modules

Author

Farjah, Ebrahim ; Perret, Robert

Author_Institution

Lab. d´´Electrotech., LEG/ENSIEG, St. Martin d´´Heres, France

fYear

1994

fDate

2-6 Oct 1994

Firstpage

1284

Abstract

In this paper, implementation and limitation of thermosensitive parameters when predicting junction temperature in a hybrid module is discussed and some remedies are presented for this purpose. The results obtained by applying two important thermosensitive parameters of an IGBT show that equivalent temperature predicted by these parameters is not a simple average of individual chip temperature but is rather near to the hottest one. The results of different tests are presented and a generalized method (temperature sensitive parameter method) for using these parameters is explained

Keywords

insulated gate bipolar transistors; modules; p-n junctions; power bipolar transistors; power field effect transistors; thermal analysis; IGBT; chip temperature; equivalent temperature prediction; hybrid power modules; junction temperature prediction; temperature sensitive parameter method; thermosensitive parameters; Computer aided software engineering; Diodes; Employee welfare; Insulated gate bipolar transistors; Multichip modules; Substrates; Temperature measurement; Temperature sensors; Testing; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1994., Conference Record of the 1994 IEEE

Conference_Location

Denver, CO

Print_ISBN

0-7803-1993-1

Type

conf

DOI

10.1109/IAS.1994.377584

Filename

377584