An efficient gate driver for high-power insulated gate bipolar transistors

Author

Case, M.J. ; Schoeman, J.J. ; Blajszczak, G. ; van Wyk, J.D.

Author_Institution

Dept. of Electr. & Electron. Eng., Rand Afrikaans Univ., Johannesburg, South Africa

fYear

1994

fDate

2-6 Oct 1994

Firstpage

1303

Abstract

This paper presents a novel FET/IGBT gate drive circuit for high power applications. Full galvanic isolation is provided, no floating power supplies are needed and continuous (DC) gate drive is possible. The circuit topology consists in essence of an inverter coupled to a synchronous rectifier. Bidirectional current flow to reverse-bias the gate is obtained by using field-effect transistors operating in the third quadrant as switching elements

Keywords

DC-AC power convertors; bipolar transistor switches; driver circuits; field effect transistor switches; insulated gate bipolar transistors; invertors; power bipolar transistors; power field effect transistors; power semiconductor switches; rectifiers; rectifying circuits; switching circuits; DC gate drive; FET/IGBT gate drive circuit; bidirectional current flow; circuit topology; continuous gate drive; field-effect transistors; galvanic isolation; gate driver; gate reverse-bias; high-power insulated gate bipolar transistors; inverter; switching elements; synchronous rectifier; Circuit topology; Coupling circuits; Driver circuits; FETs; Galvanizing; Insulated gate bipolar transistors; Insulation; Inverters; Power supplies; Rectifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1994., Conference Record of the 1994 IEEE

Conference_Location

Denver, CO

Print_ISBN

0-7803-1993-1

Type

conf

DOI

10.1109/IAS.1994.377588

Filename

377588