Bipolar-MOS monolithic cascode switch in VIPower technology

Author

Melito, M. ; Belverde, G. ; Galluzzo, A. ; Palara, S.

Author_Institution

Co.Ri.M.Me. Res. Centre, Catania, Italy

fYear

1994

fDate

2-6 Oct 1994

Firstpage

1322

Abstract

In this paper a bipolar-power MOSFET cascode monolithic device, realized in ST-SGS Thomson VIPower (Vertical Intelligent Power) Technology called M3, is presented. The basic device features a three-stage deep-base NPN BJT and a vertical power MOSFET, realized inside the emitter of the trilinton output stage itself for emitter switching. The paper starts with a survey of the main characteristics of the SGS-Thomson Vertical Intelligent Power technology. Then the switching performances of the device are compared to power MOSFET and fast-switching IGBTs in terms of their forward conduction current density turn-off times and breakdown voltages

Keywords

BIMOS integrated circuits; bipolar transistor switches; field effect transistor switches; power MOSFET; power bipolar transistors; power field effect transistors; power integrated circuits; power semiconductor switches; semiconductor device models; semiconductor device testing; switching circuits; VIPower technology; Vertical Intelligent Power; bipolar-power MOSFET cascode monolithic device; breakdown voltage; emitter switching; forward conduction current density turn-off time; modelling; switching performances; testing; three-stage deep-base NPN BJT; trilinton output stage; vertical power MOSFET; Insulation; Low voltage; MOSFET circuits; Paper technology; Power generation; Power transistors; Signal processing; Silicon on insulator technology; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1994., Conference Record of the 1994 IEEE

Conference_Location

Denver, CO

Print_ISBN

0-7803-1993-1

Type

conf

DOI

10.1109/IAS.1994.377591

Filename

377591