Title :
Improving the performances of surface Plasmon resonance sensor in the infrared region by adding thin dielectric over-layer
Author :
Shalabney, Atef ; Abdulhalim, Ibrahim
Author_Institution :
Dept. of Electro-Opt. Eng., Inst. for Nanoscale Sci. & Technol., Beer-Sheva, Israel
Abstract :
The implications of adding thin dielectric film with high refractive index (RI) on top of the transducer metallic layer in surface Plasmon resonance (SPR) sensors are extensively investigated particularly in the infrared in the spectral mode. An over-layer made of silicon with thickness of about 10 nm is introduced on top of the silver metallic layer in SPR sensors when the Kretschmann-Raether (KR) configuration is used. The spectral interrogation is considered and the thickness of the dielectric over-layer is below the cutoff thickness of the lowest guided TM mode. The additional film causes to red-shift the resonance wavelength, narrowing of the dip in the reflectance spectrum, and enhancing the spectral sensitivity and the figure of merit (FOM) of the sensor. Furthermore, adding the top dielectric film enhances the electromagnetic fields at the analyte interface, increases the penetration depth inside the sensed medium, and improves the stability of the sensor.
Keywords :
dielectric thin films; electromagnetic fields; elemental semiconductors; infrared detectors; metallic thin films; silicon; stability; surface plasmon resonance; thin film sensors; transducers; FOM; KR configuration; Kretschmann-Raether configuration; RI; SPR sensor; Si; electromagnetic field; figure of merit; infrared spectral mode; lowest guided TM mode; reflectance spectrum; refractive index; resonance wavelength; sensor stability; spectral interrogation; surface plasmon resonance sensor; thin dielectric over-layer film; transducer silver metallic layer; Dielectrics; Metals; Optical surface waves; Plasmons; Reflectivity; Sensitivity; Silicon; optical biosensors; sensitivity enhancement; surface Plasmon resonance (SRP);
Conference_Titel :
Electrical & Electronics Engineers in Israel (IEEEI), 2012 IEEE 27th Convention of
Conference_Location :
Eilat
Print_ISBN :
978-1-4673-4682-5
DOI :
10.1109/EEEI.2012.6377039