Excitons in III-V strained marginal systems: dispersion relations and absorption processes

Author

Bigenwald, P. ; Gil, B. ; Konczewicz, L. ; Testud, P. ; Aulombard, R.L.

Author_Institution

Lab. de Phys. des Mater., Univ. d´´Avignon, France

fYear

1996

fDate

April 29 1996-May 3 1996

Firstpage

101

Lastpage

104

Abstract

We have investigated theoretically the optical properties of strained (001) GaAs-(Ga,In)As simple quantum wells with a high indium content (~35%), Due to the band offset, the e₁Ih₁ transition is marginally type I for x>25% and type II otherwise. We calculate the exciton parameters within a model that includes the attractive potential created by the condensed electron wavefunction on the marginal light hole one. The influence of the electric field on the valence wavefunctions away from k=0 is also studied

Keywords

III-V semiconductors; excitons; gallium arsenide; indium compounds; interface states; light absorption; semiconductor quantum wells; wave functions; GaAs-GaInAs; III-V strained marginal systems; absorption processes; attractive potential; band offset; condensed electron wavefunction; dispersion relations; electric field; excitons; marginal light hole; optical properties; valence wavefunctions; Absorption; Charge carrier processes; Charge carriers; Dispersion; Electron optics; Excitons; III-V semiconductor materials; Indium; Lattices; Optical fiber communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse, France

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570903

Filename

570903