DocumentCode
2457571
Title
Design of a Novel Finline-to-Microstrip Transition for Millimeter-Wave Power-Combining Applications
Author
Chen Chang-ming ; Peng Ye ; Chen Ai-Ping
Author_Institution
Dept. of Commun. Eng., Chengdu Univ. of Inf. Technol. of China, Chengdu, China
Volume
3
fYear
2010
fDate
12-14 April 2010
Firstpage
107
Lastpage
109
Abstract
In this paper, a novel double antipodal finline-to-microstrip transition structure which also serves as a two-way millimeter-wave power combiner is proposed. Back-to-back transitions are fabricated on 0.254 mm RT5880 substrate. A very low back-to-back insertion loss of 0.9 dB and return loss better than 12.0 dB are obtained from the structure in 29-39 GHz. Based on the passive structure, a power-combining amplifier was designed by using four Ka-band monolithic microwave integrated circuit (MMIC) power amplifier chips. The power module showed 37.8dBm output power including the loss of transition and a combining efficiency of 82% in 32-36 GHz.
Keywords
MMIC amplifiers; microstrip transitions; millimetre wave devices; power amplifiers; power combiners; Ka band monolithic microwave integrated circuit; MMIC; RT5880 substrate; antipodal finline-to-microstrip transition structure; back-to-back transitions; frequency 29 GHz to 39 GHz; passive structure; power amplifier chips; power combining amplifier; size 0.254 mm; two-way millimeter wave power combiner; Dielectric measurements; Finline; Insertion loss; MMICs; Millimeter wave communication; Millimeter wave technology; Mobile communication; Power amplifiers; Power combiners; Waveguide transitions;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Mobile Computing (CMC), 2010 International Conference on
Conference_Location
Shenzhen
Print_ISBN
978-1-4244-6327-5
Electronic_ISBN
978-1-4244-6328-2
Type
conf
DOI
10.1109/CMC.2010.132
Filename
5471531
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