• DocumentCode
    2457571
  • Title

    Design of a Novel Finline-to-Microstrip Transition for Millimeter-Wave Power-Combining Applications

  • Author

    Chen Chang-ming ; Peng Ye ; Chen Ai-Ping

  • Author_Institution
    Dept. of Commun. Eng., Chengdu Univ. of Inf. Technol. of China, Chengdu, China
  • Volume
    3
  • fYear
    2010
  • fDate
    12-14 April 2010
  • Firstpage
    107
  • Lastpage
    109
  • Abstract
    In this paper, a novel double antipodal finline-to-microstrip transition structure which also serves as a two-way millimeter-wave power combiner is proposed. Back-to-back transitions are fabricated on 0.254 mm RT5880 substrate. A very low back-to-back insertion loss of 0.9 dB and return loss better than 12.0 dB are obtained from the structure in 29-39 GHz. Based on the passive structure, a power-combining amplifier was designed by using four Ka-band monolithic microwave integrated circuit (MMIC) power amplifier chips. The power module showed 37.8dBm output power including the loss of transition and a combining efficiency of 82% in 32-36 GHz.
  • Keywords
    MMIC amplifiers; microstrip transitions; millimetre wave devices; power amplifiers; power combiners; Ka band monolithic microwave integrated circuit; MMIC; RT5880 substrate; antipodal finline-to-microstrip transition structure; back-to-back transitions; frequency 29 GHz to 39 GHz; passive structure; power amplifier chips; power combining amplifier; size 0.254 mm; two-way millimeter wave power combiner; Dielectric measurements; Finline; Insertion loss; MMICs; Millimeter wave communication; Millimeter wave technology; Mobile communication; Power amplifiers; Power combiners; Waveguide transitions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Mobile Computing (CMC), 2010 International Conference on
  • Conference_Location
    Shenzhen
  • Print_ISBN
    978-1-4244-6327-5
  • Electronic_ISBN
    978-1-4244-6328-2
  • Type

    conf

  • DOI
    10.1109/CMC.2010.132
  • Filename
    5471531