Title :
Automotive applications of power BiMOS
Author :
Frank, Randy ; O´Malley, Pat
Author_Institution :
Motorola Inc., Tempe, AZ, USA
Abstract :
A cost-effective, mixed technology process has been developed that extends the operating range of bipolar integrated circuits into the power integrated circuit regime. The process simultaneously produces CMOS (complementary metal-oxide-semiconductor) logic with a PNP vertical power device. The combination can withstand transients in excess of 85 V and jump start (24 V) and reverse polarity conditions while controlling several amperes of current, making it ideal for automotive applications. Two production devices and a new product that have been developed using the BiMOS (bipolar MOS) process are described: (1) a high-side switch that is used for controlling inductive loads; (2) a transient suppressor used to protect voltage-sensitive electronic components; and (3) a low-side, protected driver.
Keywords :
BIMOS integrated circuits; automotive electronics; power integrated circuits; 24 V; 85 V; PNP vertical power device; automotive electronics; bipolar integrated circuits; high-side switch; inductive loads; power integrated circuit; power transistors; protected driver; reverse polarity conditions; transient suppressor; withstand transients; Automotive applications; Bipolar integrated circuits; CMOS logic circuits; CMOS process; CMOS technology; Integrated circuit technology; Logic devices; Power integrated circuits; Protection; Switches;
Conference_Titel :
Automotive Applications of Electronics, 1988., IEEE Workshop on
Conference_Location :
Dearborn, MI, USA
DOI :
10.1109/AAE.1988.47586
