DocumentCode :
2458147
Title :
Simple and efficient approach for shunt admittance parameters calculations of VLSI on-chip interconnects on semiconducting substrate
Author :
Ymeri, H. ; Nauwelaers, B. ; Maex, Karen ; De Roest, D. ; Stucchi, M. ; Vandenberghe, S.
Author_Institution :
ESAT, Katholieke Univ., Leuven, Heverlee, Belgium
fYear :
2002
fDate :
2002
Firstpage :
1113
Abstract :
The purpose of this paper is a slight modification of a series expansion method proposed elsewhere for the electrical modeling of lossy-coupled multilayer interconnection lines, that does not involve iterations and yields solutions of sufficient accuracy for most practical interconnections as used in common VLSI chips. We use a Fourier series restricted to cosine functions. The solution for the layered medium is found by matching the potential expressions in the different homogeneous layers with the help of boundary conditions. In the plane of conductors, the boundary conditions are satisfied only at a finite, discrete set of points (point matching procedure)
Keywords :
Fourier series; VLSI; integrated circuit interconnections; integrated circuit modelling; substrates; Fourier series; Si; Si substrate; VLSI; boundary conditions; electrical modeling; lossy-coupled multilayer interconnections; point matching; series expansion; Admittance; Capacitance; Fourier series; Frequency; Integrated circuit interconnections; Metallization; Semiconductivity; Strips; Substrates; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design, Automation and Test in Europe Conference and Exhibition, 2002. Proceedings
Conference_Location :
Paris
ISSN :
1530-1591
Print_ISBN :
0-7695-1471-5
Type :
conf
DOI :
10.1109/DATE.2002.998468
Filename :
998468
Link To Document :
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