Title :
A consistently potential distribution oriented compact IGBT model
Author :
Miyake, M. ; Ohashi, A. ; Yokomichi, M. ; Masuoka, H. ; Kajiwara, T. ; Sadachika, N. ; Feldmann, U. ; Mattausch, H.J. ; Miura-Mattausch, M. ; Kojima, T. ; Shoji, T. ; Nishibe, Y.
Author_Institution :
Hiroshima Univ., Higashi-Hiroshima
Abstract :
With the trend to higher switching speed for IGBTs, the dynamics of the MOS part have increasing impact on device characteristics. In addition, the base-charge distribution of the BJT part has also to be modeled quite accurately to capture the IGBT´s overall dynamic behavior adequately. We present a new IGBT model for circuit simulation, where all controlling potentials in the base region are calculated under fully dynamic load conditions, and which includes an advanced surface- potential-based charge-oriented MOSFET model. The approach assures that the dynamic interaction between MOS and BJT part is accurately taken into account. The model´s abilities to describe the impact of the MOS-gate capacitance on the IGBT output characteristics, and to capture dynamic effects like overshoot under rapid switch- off conditions, are verified.
Keywords :
MOSFET; circuit simulation; insulated gate bipolar transistors; BJT part; MOS-gate capacitance; advanced surface- potential-based charge-oriented MOSFET model; base-charge distribution; circuit simulation; compact IGBT model; fully dynamic load conditions; switch-off conditions; Bipolar transistor circuits; Bipolar transistors; Capacitance; Circuit simulation; Equations; Insulated gate bipolar transistors; MOSFET circuits; Research and development; Switching circuits; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 2008. PESC 2008. IEEE
Conference_Location :
Rhodes
Print_ISBN :
978-1-4244-1667-7
Electronic_ISBN :
0275-9306
DOI :
10.1109/PESC.2008.4592060