The modeling and characterization of silicon carbide thyristors

The U.S. electric grid is moving down a path of modernization and SiC-based thyristor devices may play a role in that transformation. This paper reports two primary contributions - (a) accurate physics based modeling and characterization of a SiC p-type thyristor, and (b) developing and codifying a generalized parameter extraction strategy for the Lumped-Charge modeling method, making it feasible to apply this technique for any bipolar device - beyond the thyristor. The level-3 physics based model incorporating SiC material and device geometry is highly accurate, replicating device capacitances, lifetimes, and non-quasi-static effects present in the actual device. A 1 kV/36 A p-type SiC thyristor provided by Cree was used to validate the model. Special test jigs were also designed and used to fully characterize the dc and transient performance of the device, ensuring precise measurements and safety of the user.