Title :
Electrical and optical properties of Zn/sub x/Mg/sub 1-x/Se/ZnTe and Zn/sub x/Mg/sub 1-x/Se/GaAs heterojunctions
Author :
Bala, W. ; Glowacki, G. ; Gapinski, A.
Author_Institution :
Inst. of Phys., Copernicus (N.) Univ., Torun, Poland
fDate :
April 29 1996-May 3 1996
Abstract :
This work deals with the study of the luminescence and electrical properties of Zn1Mg1-xSe epilayers grown by molecular-beam epitaxy on (001) GaAs and (111) ZnTe substrates. A small amount of Mg added to ZnSe leads to a sharp increase in the linewidth of exciton line from 2 meV in pure ZnSe layer grown on GaAs substrate to about 310 meV in Zn0.68Mg0.32Se. The band gap energy and lattice constant of ZnxMg1-xSe increase with Mg content as well
Keywords :
II-VI semiconductors; III-V semiconductors; energy gap; excitons; lattice constants; magnesium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor materials; spectral line breadth; zinc compounds; GaAs; Mg content; Zn/sub x/Mg/sub 1-x/Se/GaAs; Zn/sub x/Mg/sub 1-x/Se/ZnTe; ZnMgSe-GaAs; ZnMgSe-ZnTe; ZnTe; band gap energy; electrical properties; epilayers; exciton line; heterojunctions; lattice constant; linewidth; luminescence; molecular-beam epitaxy; optical properties; Excitons; Gallium arsenide; Lattices; Luminescence; Molecular beam epitaxial growth; Optical materials; Optical superlattices; Substrates; Temperature; Zinc compounds;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse, France
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570911
