Title :
Development of 6.5 kV class IGBT with wide safety operation area
Author :
Mochizuki, K. ; Suekawa, E. ; Iura, S. ; Satoh, K.
Author_Institution :
Fukuryo Semicon Eng. Corp., Fukuoka, Japan
Abstract :
A 6.5 kV IGBT with wide safe operation area (SOA) for the high voltage inverter application is presented. The correlation between turn off energy (Eoff) and collector-emitter voltage (VCE ) in PT (punch through)-IGBT is not linear. As Eoff rapidly increases at any VCE, Eoff becomes larger. A new IGBT makes that correlation linear by a new design concept: light punch through (LPT) concept. Blocking voltage more than rating voltage of 6.5 kV is easily satisfied at Tj=-40~125°C by the optimization of n-layer thickness (tn-) and resistivity (ρn-), and LPT concept. Moreover, this new IGBT chip has achieved wide SOA that RBSOA is Jc=140A/cm2 at VCE=4.3kV and Tj=125°C and short circuit SOA is tw=13 μs at VCE=4.3 kV and Tj=125°C by optimizing p-well layer
Keywords :
insulated gate bipolar transistors; -40 to 125 C; 4.3 kV; 6.5 kV; IGBT; P-well layer optimisation; collector-emitter voltage; high voltage inverter; hot leakage current reduction; light punch through; n-layer thickness; optimization; p-base resistance; resistivity; turn off energy; wide safe operation area; Breakdown voltage; Buffer layers; Conductivity; Ice; Insulated gate bipolar transistors; Leakage current; Power engineering and energy; Safety; Semiconductor optical amplifiers; Temperature dependence;
Conference_Titel :
Power Conversion Conference, 2002. PCC-Osaka 2002. Proceedings of the
Conference_Location :
Osaka
Print_ISBN :
0-7803-7156-9
DOI :
10.1109/PCC.2002.998555
