• DocumentCode
    2460490
  • Title

    Low energy implant throughput improvement by using the Arsenic dimer ion (As2+) on the Axcelis GSDIII/LED ion implanter

  • Author

    Kopalidis, P. ; Sohl, C. ; Freer, B.S. ; Arneen, M. ; Reece, R. ; Rathmell, M.

  • fYear
    2002
  • fDate
    27-27 Sept. 2002
  • Firstpage
    122
  • Lastpage
    125
  • Abstract
    Low energy arsenic implants used in the formation of ultra-shallow junctions are characterized on the GSD/Ultra high current ion implanter. Significant advantages in beam current and process throughput are demonstrated by using the Arsenic dimer ion (As2+) for implant energies lower than 5 keV. Dimer implants require only half the dose and use twice the energy of equivalent As implants, resulting in significantly reduced implant times. Process results including Thermawave (TW), sheet resistance (Rs) and SIMS profiles show equivalence between As+ and As2+ implants.
  • Keywords
    CMOS integrated circuits; arsenic; ion implantation; secondary ion mass spectra; semiconductor doping; As2+; As2+ ion implantation; Axcelis GSDIII/LED ion implanter; SIMS profiles; beam current; low energy implant throughput improvement; process throughput; sheet resistance; ultra-shallow junctions; CMOS integrated circuits; Electrons; Implants; Ion implantation; Light emitting diodes; Particle beams; Plasma sources; Productivity; Thermal resistance; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
  • Conference_Location
    Taos, New Mexico, USA
  • Print_ISBN
    0-7803-7155-0
  • Type

    conf

  • DOI
    10.1109/IIT.2002.1257954
  • Filename
    1257954
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2460490