A 94 GHz monolithic high output power amplifier

Author

Huang, P. ; Lin, E. ; Lai, R. ; Biedenbender, M. ; Huang, T.W. ; Wang, H. ; Geiger, C. ; Block, T. ; Liu, P.H.

Author_Institution

TRW Electron. Syst. & Technol. Div., Redondo Beach, CA, USA

Volume

3

fYear

1997

fDate

8-13 June 1997

Firstpage

1175

Abstract

A two-stage monolithic W-band power amplifier using 0.1-/spl mu/m pseudomorphic AlGaAs/InGaAs/GaAs T-gate power HEMT process has been designed, fabricated, and tested. This MMIC PA exhibits 8 dB linear gain and a maximum output power of 300 mW with 10.5% peak power-added efficiency at 94 GHz. The substrate thickness is 2 mil to take advantage of lower thermal resistance as well as smaller via holes and a more compact chip layout. To our knowledge, the 300-mW output power represents the highest output power for a single W-band power amplifier chip at this frequency.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit design; millimetre wave power amplifiers; thermal resistance; 0.1 micron; 10.5 percent; 2 mil; 300 mW; 94 GHz; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs; W-band; chip layout; high output power amplifier; linear gain; power-added efficiency; pseudomorphic T-gate power HEMT process; thermal resistance; via holes; Gallium arsenide; HEMTs; High power amplifiers; Indium gallium arsenide; MMICs; Power amplifiers; Power generation; Process design; Testing; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.596536

Filename

596536