DocumentCode
2461418
Title
60 GHz high-efficiency HEMT MMIC chip set development for high-power solid state power amplifier
Author
Hwang, Y. ; Lester, J. ; Schreyer, G. ; Zell, G. ; Schrier, S. ; Yamauchi, D. ; Onak, G. ; Kasody, B. ; Kono, R. ; Chen, Y.C. ; Lai, R.
Author_Institution
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Volume
3
fYear
1997
fDate
8-13 June 1997
Firstpage
1179
Abstract
A 60 GHz high-efficiency HEMT MMIC chip set was developed including two fully-matched HEMT MMIC chips. A 2-mil thick MMIC with 300 mW output power and 22% efficiency and a 4-mil thick gain stage MMIC are described. They were used as building blocks of high power (1 to 50 watts) SSPA.
Keywords
HEMT integrated circuits; field effect MIMIC; millimetre wave amplifiers; power amplifiers; wideband amplifiers; 1 to 50 W; 2 mil; 22 percent; 300 mW; 4 mil; 60 GHz; HEMT MMIC chip set; SSPA; fully-matched circuits; millimetre-wave power amplifiers; output power; solid state power amplifier; Gallium arsenide; HEMTs; High power amplifiers; Inductance; MMICs; Power amplifiers; Power generation; Radiofrequency amplifiers; Solid state circuits; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.596537
Filename
596537
Link To Document