High gain and high efficiency K-band power HEMT with WSi/Au T-shaped gate

Author

Kunii, T. ; Yoshida, N. ; Miyakuni, S. ; Shiga, T. ; Oku, T. ; Kitano, T. ; Udomoto, J. ; Komaru, M. ; Inoue, A. ; Tsuji, S. ; Tanino, N. ; Ishikawa, T. ; Mitsui, Y.

Author_Institution

Optoelectron. & Microwave Devices Lab., Mitsubishi Electr. Corp., Hyogo, Japan

Volume

3

fYear

1997

fDate

8-13 June 1997

Firstpage

1187

Abstract

We have developed WSi/Au T-shaped buried gate pseudomorphic HEMT with the good uniformity of recess current by using a selective etching process and with a high off-state break down voltage of over 19 V. A 1.4 W output power has been obtained with a power-added efficiency of 55.6% and an associated gain of 9.2 dB under high voltage operation of Vd=10 V at 18 GHz. This is the highest gain and efficiency achieved by a single FET chip with over a watt output power at this frequency.

Keywords

etching; gold; microwave field effect transistors; microwave power transistors; power HEMT; power field effect transistors; silicon alloys; tungsten alloys; 1.4 W; 10 V; 18 GHz; 55.6 percent; 9.2 dB; K-band power HEMT; WSi-Au; WSi/Au T-shaped buried gate pseudomorphic HEMT; gain; high voltage operation; off-state breakdown voltage; output power; power-added efficiency; recess current uniformity; selective etching; single FET chip; Etching; FETs; Frequency; Gain; Gold; HEMTs; K-band; PHEMTs; Power generation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.596539

Filename

596539