Nanoscale mapping of dopant distributions in InP current blocking layers

Author

Hull, Robert ; Moore, Mary V. ; Walker, John F.

Author_Institution

Dept. of Mater. Sci., Virginia Univ., Charlottesville, VA, USA

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

133

Lastpage

140

Abstract

A novel application of combined electron and ion beam techniques for the study of dopant distributions in InP-based structures is described. It is demonstrated that dopant distributions in InP may be mapped from transmission electron microscope images with spatial resolution ~10 nm and compositional sensitivity ~10¹⁷ cm^-3. Applications to current blocking layers in InP laser diode structures are illustrated. Pertinent experimental observations relating to the origin of this unexpected dopant contrast are discussed

Keywords

III-V semiconductors; doping profiles; focused ion beam technology; indium compounds; internal stresses; semiconductor doping; semiconductor lasers; sputtering; transmission electron microscopy; InP; InP current blocking layers; InP laser diode structures; TEM images; compositional sensitivity; dopant contrast; dopant distributions; electron beam techniques; ion beam techniques; nanoscale mapping; Biomembranes; Electron beams; Electron emission; Focusing; Indium phosphide; Ion beams; Laser beams; Spatial resolution; Spectroscopy; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570923

Filename

570923