Novel InGaP/AlGaAs/InGaAs heterojunction FET for X-Ku band power applications

Author

Okamoto, Y. ; Matsunaga, K. ; Kuzuhara, M. ; Kanamori, Mitsuru

Author_Institution

Kansai Electron. Res. Lab., NEC Corp., Shiga, Japan

Volume

3

fYear

1997

fDate

8-13 June 1997

Firstpage

1191

Abstract

We have successfully fabricated a novel heterojunction FET (HJFET) with an InGaP surface layer for high yield X-Ku band power applications. Standard deviation in the threshold voltage of 60 mV was achieved by using a highly-selective wet recess etching technique. The fabricated HJFET (Wg=16.8 mm) delivered an output power of 9.5 W and a power-added efficiency of 35% with a low carrier-to-third-order intermodulation distortion ratio of -29.5 dBc at 12 GHz. Moreover, the 25.2 mm HJFET delivered an output power of 12.2 W.

Keywords

III-V semiconductors; aluminium compounds; etching; gallium arsenide; gallium compounds; indium compounds; intermodulation distortion; junction gate field effect transistors; microwave field effect transistors; microwave power transistors; power field effect transistors; 12 GHz; 12.2 W; 35 percent; 9.5 W; InGaP-AlGaAs-InGaAs; Ku-band; X-band; carrier-to-third-order intermodulation distortion ratio; heterojunction FET; output power; power HJFET fabrication; power-added efficiency; selective wet recess etching; threshold voltage; yield; Breakdown voltage; FETs; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Laboratories; National electric code; Power generation; Substrates; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.596540

Filename

596540