Non-contact device and integrated circuit characterization in the G-Band (140–220 GHz)

We demonstrate, for the first time, on-wafer 2-port characterization of passive millimeter wave components using a novel, non-contact measurement probe technique in the G-band (140-220 GHz). This new non-contact approach enables fast, repeatable, low-cost, wear&tear-free, robust, and large-scale evaluation of integrated circuits (IC) and devices. On-wafer calibration standards are used to accurately factor out for the repeatable errors in the non-contact probe setup. Owing to its quasi-optical nature, this novel method is readily scalable for a broad frequency range from mmW to THz (60 GHz-3 THz) bands.