Title :
On deep levels in high-resistivity LEC-GaAs investigated by means of photo induced current transient spectroscopy
Author :
Seghier, D. ; Gislason, H.P.
Author_Institution :
Sci. Inst., Iceland Univ., Reykjavik, Iceland
fDate :
29 Apr-3 May 1996
Abstract :
In order to study deep defects in undoped LEC-grown GaAs, photo induced current transient spectroscopy (PICTS) has been carried out on materials with a depletion region. Five main traps were observed. In addition to positions in the gap, it is shown that the nature of carrier traps can also be identified. Contributions from the surface and the bulk of the material in the PICTS signal, are compared. Also, effects from the excitation light wavelength on PICTS spectra, are reported
Keywords :
III-V semiconductors; deep level transient spectroscopy; deep levels; defect states; electron traps; gallium arsenide; hole traps; GaAs; PICTS; carrier traps; deep levels; depletion region; excitation light wavelength; high-resistivity LEC-GaAs; photo induced current transient spectroscopy; Charge carrier processes; Gallium arsenide; Lighting; Ohmic contacts; Optical surface waves; Radiative recombination; Semiconductor materials; Spectroscopy; Substrates; Surface waves;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570927
