Point defects in undoped semi-insulating GaAs: correlation between thermally stimulated current and positron annihilation spectroscopies

Author

Fang, Z.-Q. ; Look, D.C. ; Kuisma, S. ; Saarinen, K. ; Hautojarvi, P.

Author_Institution

Dept. of Phys., Wright State Univ., Dayton, OH, USA

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

149

Lastpage

154

Abstract

Point defects and the main electron traps in undoped semi-insulating GaAs grown by vertical gradient freeze and high- and low-pressure liquid encapsulated Czochralski techniques have been studied by positron annihilation (PAS) and thermally stimulated current (TSC) spectroscopies, respectively. We find good correlations between the concentrations of the TSC traps T₂ (0.63 eV) and T₅ (0.35 eV), and the PAS identified-defects As_Ga and V _As, respectively. A good correlation between the concentration of intrinsic acceptors (V_Ga and Ga_As) measured by PAS, and the total acceptor concentration measured by infrared absorption, is also found

Keywords

III-V semiconductors; crystal growth from melt; electron traps; gallium arsenide; impurity absorption spectra; impurity distribution; infrared spectra; positron annihilation; thermally stimulated currents; vacancies (crystal); GaAs; acceptor concentration; electron traps; high-pressure liquid encapsulated Czochralski techniques; infrared absorption; low-pressure liquid encapsulated Czochralski techniques; point defects; positron annihilation; thermally stimulated current; vertical gradient freeze liquid encapsulated Czochralski techniques; Electromagnetic wave absorption; Electron traps; Gallium arsenide; Laboratories; Lifetime estimation; Lighting; Physics; Positrons; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570928

Filename

570928