Modeling of the I-V and I-t characteristics of multiferroic BiFeO3 layers

Author

Miranda, E. ; Jimenez, D. ; Blasco, J. ; Sune, J. ; Tsurumaki-Fukuchi, A. ; Yamada, H. ; Sawa, A.

Author_Institution

Dept. d´Eng. Electron., Univ. Autonoma de Barcelona, Cerdanyola del Vallés, Spain

fYear

2015

fDate

11-13 Feb. 2015

Firstpage

1

Lastpage

3

Abstract

We have investigated the current-voltage (I-V) and current-time (I-t) characteristics of Pt/BiFeO₃/SrRuO₃ structures fabricated on SrTiO₃ substrates. The devices exhibit resistive switching effect under the application of a single and multiple voltage loops. The I-V curves are simulated using a Schottky-like conduction model with voltage-varying parameters. The model includes series resistance correction and barrier lowering effect. The I-t curves are fitted using a power-law model. It is found that the Schottky barrier height (SBH) modulation arising from the BiFeO₃ polarization reversal is remarkably lower (<;0.07 eV) than previously reported (>0.5 eV) and that the ON current decay for a constant applied voltage is low and characterized by very small power exponent (~10^-2). This indicates that the ON state is remarkably stable against electrical stress.

Keywords

Schottky barriers; bismuth compounds; dielectric hysteresis; dielectric polarisation; multiferroics; platinum; resistive RAM; strontium compounds; Pt-BiFeO₃-SrRuO₃; Schottky barrier height modulation; Schottky-like conduction model; SrTiO₃; barrier lowering effect; current-time characteristics; current-voltage characteristics; multiferroic layers; polarization reversal; resistive switching effect; series resistance correction; voltage-varying parameters; Switches; BiFeO3; Hysteresis; Multiferroic; Resistive Switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2015 10th Spanish Conference on

Conference_Location

Madrid

Type

conf

DOI

10.1109/CDE.2015.7087449

Filename

7087449