• DocumentCode
    2463028
  • Title

    Temperature levels effects on the thermomechanical behaviour of solder attach during thermal cycling of power electronic modules

  • Author

    Bouarroudj, M. ; Khatir, Z. ; Lefebvre, S.

  • Author_Institution
    INRETS-LTN, Arcueil
  • fYear
    2008
  • fDate
    15-19 June 2008
  • Firstpage
    2435
  • Lastpage
    2440
  • Abstract
    The paper presents the effect of temperature amplitude and dwells level on the thermomechanical behaviour of power modules solder. Especially, we show the influence of these parameters on the crack initiation and propagation in the solder layer between direct bond copper and base plate of high power IGBT modules. For this purpose, thermal cycling tests have been performed on IGBT power modules with three temperature profiles. For cycle#l temperature vary between -40degC and 120degC, cycle#2 temperature vary from 40degC to 120degC and for cycle#3 temperature vary from -40degC to 40degC. These tests revealed that solder crack initiation and its propagation occur earlier for cycle#l where temperature variation is higher. But the unexpected results concern those of cycle#2 and cycle#3. In spite of the fact that its have the same temperature variations, solder crack initiations occur earlier and propagate faster in cycle#2 than in cycle#3 . These results show clearly that high and low temperature levels are important on solder lifetime. In order to understand the experimental results, FE simulations have been performed (with ANSYS). The first obtained results show that stress variation depends on the low temperature level, lower is Tmin higher is stress variation. On the other hand, strain variation depends on high temperature level, higher is Tmax higher is strain variation. Finally, Complementary simulations with various high and low temperatures have been performed and revealed tow mechanical behaviour of the solder. When upper temperature is below a homologous temperature of 0.74 Tm, shear strain variations remains in a relatively small range and shear stress variations have a linear dependence with the temperature variation. On the contrary, when Tmax is above 0.74 Tm, shear stresses variations reach a saturation value while inelastic shear strains increase significantly.
  • Keywords
    circuit testing; electronics packaging; finite element analysis; insulated gate bipolar transistors; modules; power bipolar transistors; solders; stress-strain relations; thermal analysis; direct bond copper; finite element analysis; high power IGBT base plate modules; inelastic shear strains; low temperature levels; power electronic modules; shear strain variations; shear stress variations; solder crack initiation; solder layer propagation; temperature levels effects; thermal cycling tests; thermomechanical behaviour; Bonding; Capacitive sensors; Insulated gate bipolar transistors; Multichip modules; Power electronics; Stress; Temperature dependence; Temperature distribution; Testing; Thermomechanical processes; Finite Element Analysis (FEA); IGBT; Packaging; Power electronic modules; Thermal cycling tests;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 2008. PESC 2008. IEEE
  • Conference_Location
    Rhodes
  • ISSN
    0275-9306
  • Print_ISBN
    978-1-4244-1667-7
  • Electronic_ISBN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PESC.2008.4592306
  • Filename
    4592306