The effect of temperature during helium ion implantation-induced crystallization of iron-based amorphous alloys

Author

Wakabayashi, H. ; San-no, T. ; Toriyama, T. ; Hayashi, Neisei

fYear

2002

fDate

27-27 Sept. 2002

Firstpage

591

Lastpage

593

Abstract

The effect of implantation temperature on implantation-induced crystallization in amorphous Fe₈₀B₂₀ alloy was studied for 40 keV He⁺ implantation with doses up to 3×10¹⁸ ions/cm². Formation of crystalline phases were analyzed by conversion electron Mossbauer spectroscopy, and the induced crystalline phase was identified to be α-Fe. A critical dose for crystallization at implantation temperature of 300 K was found to be about 2.5×10¹⁸ ions/cm², whereas it was about 0.3×10¹⁸ ions/cm² for 430 K, which suggests that implantation-induced crystallization is strongly suppressed by lowering the implantation temperature. The possibility of application of this effect to a process for producing amorphous-crystalline nanocomposites is discussed.

Keywords

Mossbauer effect; amorphous magnetic materials; boron alloys; crystallisation; helium; ion implantation; iron alloys; α-Fe; 300 K; 40 keV; 40 keV He⁺ implantation; 430 K; Fe₈₀B₂₀:He; He ion implantation-induced crystallization; amorphous Fe₈₀B₂₀ alloy; conversion electron Mossbauer spectroscopy; critical dose; crystalline phases; implantation temperature; Amorphous materials; Crystallization; Electrons; Glass; Helium; Implants; Insulation; Iron alloys; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

Conference_Location

Taos, New Mexico, USA

Print_ISBN

0-7803-7155-0

Type

conf

DOI

10.1109/IIT.2002.1258074

Filename

1258074