Title :
The effect of temperature during helium ion implantation-induced crystallization of iron-based amorphous alloys
Author :
Wakabayashi, H. ; San-no, T. ; Toriyama, T. ; Hayashi, Neisei
Abstract :
The effect of implantation temperature on implantation-induced crystallization in amorphous Fe80B20 alloy was studied for 40 keV He+ implantation with doses up to 3×1018 ions/cm2. Formation of crystalline phases were analyzed by conversion electron Mossbauer spectroscopy, and the induced crystalline phase was identified to be α-Fe. A critical dose for crystallization at implantation temperature of 300 K was found to be about 2.5×1018 ions/cm2, whereas it was about 0.3×1018 ions/cm2 for 430 K, which suggests that implantation-induced crystallization is strongly suppressed by lowering the implantation temperature. The possibility of application of this effect to a process for producing amorphous-crystalline nanocomposites is discussed.
Keywords :
Mossbauer effect; amorphous magnetic materials; boron alloys; crystallisation; helium; ion implantation; iron alloys; α-Fe; 300 K; 40 keV; 40 keV He+ implantation; 430 K; Fe80B20:He; He ion implantation-induced crystallization; amorphous Fe80B20 alloy; conversion electron Mossbauer spectroscopy; critical dose; crystalline phases; implantation temperature; Amorphous materials; Crystallization; Electrons; Glass; Helium; Implants; Insulation; Iron alloys; Spectroscopy; Temperature;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1258074
