• DocumentCode
    2463059
  • Title

    A DC to X-band frequency doubler using GaAs HBT MMIC

  • Author

    Xiangdong Zhang ; Yong-Hoon Yun

  • Author_Institution
    Corp. R&D Center, M/A-COM Inc., St. Lowell, MA, USA
  • Volume
    3
  • fYear
    1997
  • fDate
    8-13 June 1997
  • Firstpage
    1213
  • Abstract
    An analog frequency doubler is developed using GaAs HBT MMIC technology. In this doubler circuit, a novel push-push circuit configuration is used to provide the efficient frequency conversion and the fundamental frequency rejection over a broad bandwidth. The measurement results of the MMIC demonstrate an average 0 to 3 dB conversion gain and a 10 dB rejection on fundamental frequency up to 14 GHz. Thus, this MMIC can be used as a low-cost insertion block to achieve any stable local-oscillation signals up to X-band by multiplying the high quality VCOs at low frequencies, especially the inexpensive Si BJT based VCOs at wireless frequencies.
  • Keywords
    III-V semiconductors; MMIC frequency convertors; bipolar MMIC; frequency multipliers; gallium arsenide; heterojunction bipolar transistors; 0 to 3 dB; 14 GHz; DC to X-band analog frequency doubler; GaAs; GaAs HBT MMIC; Si BJT VCO; conversion gain; frequency conversion; frequency rejection; insertion block; local-oscillation signal; push-push circuit; wireless frequency; Bandwidth; Circuits; Costs; Frequency conversion; Gain; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Radio frequency; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1997., IEEE MTT-S International
  • Conference_Location
    Denver, CO, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-3814-6
  • Type

    conf

  • DOI
    10.1109/MWSYM.1997.596545
  • Filename
    596545