• DocumentCode
    2463698
  • Title

    Single event transients generation in silicon devices with pulsed laser

  • Author

    de Paul, Ivan ; Bandi, Franco N. ; Segura, Jaume ; Bota, Sebastia A.

  • Author_Institution
    Electron. Syst. Group, Univ. de les Illes Balears (UIB), Palma, Spain
  • fYear
    2015
  • fDate
    11-13 Feb. 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We perform a comparative study of the characteristics and capabilities of a pulsed laser system that emulates single event injection available at the UIB with respect to similar pulsed laser test facilities in Europe (EADS, IMS) and the United States (JPL, NRL). A series of experimental measurements were taken on a silicon photodiode (Centronic OSD15-5T) used in a previous comparative study conducted by the mentioned centers.
  • Keywords
    laser beam effects; radiation hardening (electronics); pulsed laser system; silicon devices; single event injection emulation; single event transients generation; Measurement by laser beam; Photodiodes; Semiconductor lasers; Single event transients; Test facilities; Transient analysis; Laser beams; Single event transient; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2015 10th Spanish Conference on
  • Conference_Location
    Madrid
  • Type

    conf

  • DOI
    10.1109/CDE.2015.7087497
  • Filename
    7087497
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2463698