Leakage current from non-alloyed metal on carbon controlled semi-insulating GaAs crystals

Author

Otoki, Y. ; Sahara, M. ; Takahashi, S. ; Kuma, S. ; Onishi, M. ; Kashiwa, M.

Author_Institution

Adv. Res. Center, Hitachi Cable Ltd., Japan

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

173

Lastpage

176

Abstract

Leakage of carbon-controlled semi-insulating GaAs crystals was investigated using various pairs of n-type (AuGe, with alloying), non-alloyed (Au) and p-type (AuZn, with alloying) electrodes. Large leakage currents were observed under two conditions: when positive voltage was applied to non-alloyed or p-type electrode with opposite-side electrode of n-type. This leakage had no relation to carbon concentration which determine the semi-insulating properties. Properties of the non-alloyed electrode were found to be very similar to those of p-type electrode. A model is proposed which can explain all the results, taking into account band-bending near the electrode

Keywords

III-V semiconductors; Schottky barriers; carbon; gallium arsenide; leakage currents; semiconductor-metal boundaries; GaAs:C; band-bending; electrodes; leakage current; non-alloyed metal; positive voltage; Alloying; Annealing; Circuits; Crystals; Electrodes; Gallium arsenide; Insulation; Leakage current; Mechanical factors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570933

Filename

570933