Title :
NH3 Plasma Treatment for Flash Memory on Poly-Si Thin Films
Author :
Lin, Yu-Hsien ; You, Hsin-Chiang ; Chou, Jay-Chi ; Chou, Tung-Huan ; Chao, Tien-Sheng
Author_Institution :
Dept. of Electron. Eng., Nat. United Univ., Miaoli, Taiwan
Abstract :
In this paper, we fabricated the poly-Si-oxide-nitride-oxide-silicon (SONOS)-type Flash memories on polycrystalline-silicon thin films. Employing a powerful defect passivation technique, i.e., NH3 plasma treatment, the charge storage capability was clearly observed to be remarkably improved including charge storage, drain disturbance, and gate disturbance.
Keywords :
flash memories; semiconductor thin films; NH3; SONOS-type flash memories; charge storage capability; defect passivation; drain disturbance; gate disturbance; plasma treatment; poly-Si thin films; poly-Si-oxide-nitride-oxide-silicon; polycrystalline-silicon thin films; Charge carrier processes; Educational institutions; Flash memory; Hafnium compounds; Plasmas; Thin film transistors; Tunneling; Flash memories; NH3 Plasma; Polycrystalline-silicon thin-film transistor (poly-Si-TFT); poly-Si–oxide–nitride–oxide–silicon (SONOS)-type memories;
Conference_Titel :
Computer, Consumer and Control (IS3C), 2012 International Symposium on
Conference_Location :
Taichung
Print_ISBN :
978-1-4673-0767-3
DOI :
10.1109/IS3C.2012.212
