The use of pulsed vacuum arc deposition method for making films of various materials

Author

Tochitsky, E.I. ; Gasenkova, I.V. ; Milashevskaya, I.G. ; Selifanov, O.V. ; Stankevich, E.V.

Author_Institution

Eng. Centre, Acad. of Sci., Minsk, Byelorussia

Volume

2

fYear

1998

fDate

17-21 Aug 1998

Firstpage

601

Abstract

The pulsed vacuum arc method used for deposition of films of refractory metals, diamond-like carbon, Bi₂Te₃-based semiconductor compounds of complex composition, and multi-layer metallocarbon compositions is reported which ensures a high adhesion of films to various substrate materials. It is shown that structure, phase composition and of the films depend on deposition and pulsed plasma flow generation parameters. The films are characterized by oriented growth and high degree of structural dispersion caused by high instantaneous rate of particle deposition, high density of nucleation at the initial condensation phase and high degree of ionization of plasma flow. The method allows one to vary the films structure in a broad range and obtain films with reproducible composition and properties

Keywords

plasma deposited coatings; plasma deposition; plasma flow; thin films; vacuum arcs; Bi₂Te₃; adhesion; deposition conditions; initial condensation phase; nucleation density; oriented growth; particle deposition rate; phase composition; plasma flow ionisation; pulsed plasma flow generation parameters; pulsed vacuum arc deposition method; structural dispersion; structure; substrate materials; thin film deposition; Adhesives; Bismuth; Composite materials; Diamond-like carbon; Optical films; Plasma density; Semiconductor films; Substrates; Tellurium; Vacuum arcs;

fLanguage

English

Publisher

ieee

Conference_Titel

Discharges and Electrical Insulation in Vacuum, 1998. Proceedings ISDEIV. XVIIIth International Symposium on

Conference_Location

Eindhoven

ISSN

1093-2941

Print_ISBN

0-7803-3953-3

Type

conf

DOI

10.1109/DEIV.1998.738783

Filename

738783