Impact of NBTI and CHC stress on the nanoscale electrical properties of strained and non-strained MOSFETs

Author

Wu, Q. ; Porti, M. ; Bayerl, A. ; Lanza, M. ; Martin-Martinez, J. ; Rodriguez, R. ; Nafria, M. ; Aymerich, X. ; Simoen, E.

Author_Institution

Electron. Eng. Dept., Univ. Autonoma de Barcelona, Barcelona, Spain

fYear

2015

fDate

11-13 Feb. 2015

Firstpage

1

Lastpage

4

Abstract

In this work, the impact of Negative Bias Temperature Instability (NBTI) and Channel Hot Carrier (CHC) stresses on different regions along the channel of the MOSFET gate dielectric is analyzed at the nanoscale with Conductive Atomic Force Microscope (CAFM). In particular, it is demonstrated that, while the BTI degradation is homogeneous, the CHC stress degradation is higher close to source (S) and drain (D). When comparing strained and non-strained channel devices, the results show that strained devices are more sensitive to CHC stress.

Keywords

MOSFET; atomic force microscopy; hot carriers; negative bias temperature instability; CAFM; CHC stress; NBTI stress; channel hot carrier stress; conductive atomic force microscope; gate dielectric; nanoscale electrical properties; negative bias temperature instability stress; nonstrained MOSFET; Epitaxial growth; Logic gates; MOSFET; Nanoscale devices; Stress; Atomic force microscopy (AFM); MOSFET; channel hot-carrier (CHC) degradation; negative bias temperature instability (NBTI);

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2015 10th Spanish Conference on

Conference_Location

Madrid

Type

conf

DOI

10.1109/CDE.2015.7087505

Filename

7087505