Title :
Experimental research on semiconductor film deposition by filtered vacuum arcs
Author :
Jiyan, Zou ; Chun, LIU ; Zhitao, Zheng ; Geoffery, Cochrane
Author_Institution :
Juazhong Univ. of Sci. & Technol., China
Abstract :
Vacuum arc deposition (VAD) is efficient way for different kinds of film fabrication. By means of a magnetic filter, a well deigned VAD system can produce macroparticle free films with desirable deposition rate. In order to fabricate semiconductor films, the authors designed and built a filtered vacuum arc deposition system, which contains an inner toroidal coil and a pulsed arc current source. As theoretical research, they simulated their electromagnetic field and some microparameters in the toroidal coordinate and obtained the distribution of ions and electrons in the torus, which also showed the filter efficiency. As the beginning of experimental research, some conductor and semiconductor films were deposited; the authors obtained a deposition rate of 0.3 A/s and macroparticle free conditions. The pulsed current peak was about 1000 A with a frequency of once per second, and 1000 shots for one sample. A fine silicon film on glass substrates shows the light of further investigation on amorphous silicon film deposition
Keywords :
amorphous semiconductors; electromagnetic fields; elemental semiconductors; plasma deposited coatings; plasma deposition; semiconductor growth; semiconductor thin films; silicon; vacuum arcs; 1000 A; Si; Vacuum arc deposition; amorphous silicon thin film deposition; deposition rate; electromagnetic field; filter efficiency; filtered vacuum arcs; glass substrate; inner toroidal coil; macroparticle free films; magnetic filter; pulsed arc current source; pulsed current peak; Coils; Electromagnetic fields; Electrons; Fabrication; Filters; Magnetic films; Magnetic separation; Semiconductor films; Vacuum arcs; Vacuum systems;
Conference_Titel :
Discharges and Electrical Insulation in Vacuum, 1998. Proceedings ISDEIV. XVIIIth International Symposium on
Conference_Location :
Eindhoven
Print_ISBN :
0-7803-3953-3
DOI :
10.1109/DEIV.1998.738786