Title :
Photoelastic characterization of undoped semi-insulating GaAs wafers with a high-spatial-resolution infrared polariscope
Author :
Yamada, Masayoshi ; Ito, Kenichi ; Fukuzawa, Masayuki
Author_Institution :
Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol., Japan
fDate :
29 Apr-3 May 1996
Abstract :
In order to measure a small amount and spatial variation of birefringence induced by residual strains in III-V compound materials, we have developed a high-sensitivity high-spatial-resolution computer-controlled scanning infrared polariscope. Several characterization results on commercial GaAs wafers are presented to demonstrate its performance. It is found that local strain fields accompanied by crystal defects such as slip dislocations, lineages, inclusions, and voids can be observed
Keywords :
III-V semiconductors; birefringence; gallium arsenide; inclusions; infrared spectra; photoelasticity; polarimetry; slip; voids (solid); GaAs; birefringence; crystal defects; high-spatial-resolution infrared polariscope; inclusions; lineages; photoelastic characterization; residual strains; slip dislocations; undoped semi-insulating GaAs wafers; voids; Birefringence; Capacitive sensors; Gallium arsenide; Heat treatment; Manufacturing; Optical polarization; Photoelasticity; Spatial resolution; Strain measurement; Tensile strain;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570934
