Power MOSFET simulation-a model to predict the behavior of a single cell as well as a hybrid power module

Author

Thoma, Josef ; Pavuza, Franz

Author_Institution

Hewlett Packard GmbH, Vienna, Austria

fYear

1988

fDate

9-11 May 1988

Firstpage

124

Lastpage

129

Abstract

The switching performance of power MOSFETs as a function of the input characteristics is described. The use of highly doped silicon gate material together with a voltage-dependent shunt input capacitance results in a single cell resembling a transmission line element. Thus the MOSFET chip can be described as a two-dimensional line. Since the switching performance is a function of the input voltage, the form of the transmitted gate-trigger pulse mirrors the switching performance of the structure. The model introduced describes the effects of the propagation delay of the gate signal. It can be used to show the effects of the on-chip delay of the applied gate voltage on the surface of a single MOSFET as well as on discrete paralleled cells comprising the vertical power MOSFET.<>

Keywords

insulated gate field effect transistors; power transistors; semiconductor device models; discrete paralleled cells; doped Si gate; hybrid power module; input characteristics; on-chip delay; power MOSFETs; propagation delay; single cell; switching performance; transmitted gate-trigger pulse; two-dimensional line; vertical power MOSFET; voltage-dependent shunt input capacitance; Capacitance; Delay effects; MOSFET circuits; Mirrors; Power MOSFET; Power transmission lines; Predictive models; Propagation delay; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Components Conference, 1988., Proceedings of the 38th

Conference_Location

Los Angeles, CA, USA

Type

conf

DOI

10.1109/ECC.1988.12582

Filename

12582