Characterization of III-V periodic structures by spectroscopic ellipsometry and grazing X-ray reflectance

Author

Boher, Pierre ; Stehle, Jean Louis

Author_Institution

SOPRA SA, Bois-Colombes, France

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

185

Lastpage

188

Abstract

Spectroscopic Ellipsometry (SE) and Grazing X-ray Reflectance (GXR) techniques are applied on a III-V periodic epitaxial structures in order to extract accurately structural informations. Thickness informations are obtained directly from Fourier transformation of the GXR spectra and confirmed by simulation of the reflectance curve. Compositions are deduced from SE regression using GXR thickness as input values. Using this method it was possible to detect g reduction of the density of the top layers. This layer imperfection is important to deduce accurate reflectance properties for the same structure

Keywords

III-V semiconductors; X-ray scattering; ellipsometry; photoreflectance; semiconductor epitaxial layers; Fourier transformation; III-V periodic structures; density; grazing X-ray reflectance; layer imperfection; reflectance curve; spectroscopic ellipsometry; thickness information; Data mining; Ellipsometry; Fourier transforms; Mirrors; Nonhomogeneous media; Optical films; Optical sensors; Periodic structures; Reflectivity; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570936

Filename

570936