Title :
Be diffusion in InGaAs epitaxial layers during rapid thermal annealing: an effective diffusivity approach and a nonequilibrium model
Author :
Marcon, J. ; Koumetz, S. ; Ketata, K. ; Ketata, M. ; Launay, P.
Author_Institution :
LCIA/INSA de Rouen, Mont Saint Aignan, France
fDate :
29 Apr-3 May 1996
Abstract :
Be diffusion during post-growth annealing has been studied in InGaAs epitaxial layers. To explain the observed concentration profiles, two models have been proposed. A good agreement has been obtained between experimental and calculated data. The point defect concentration in epitaxial layers during diffusion in InGaAs is also discussed
Keywords :
III-V semiconductors; beryllium; diffusion; doping profiles; gallium arsenide; indium compounds; rapid thermal annealing; semiconductor doping; semiconductor epitaxial layers; Be diffusion; InGaAs:Be; InGaAs:Be epitaxial layers; concentration profiles; effective diffusivity; nonequilibrium model; point defect concentration; rapid thermal annealing; Degradation; Differential equations; Doping; Epitaxial layers; Gallium compounds; Heterojunction bipolar transistors; Indium gallium arsenide; Rapid thermal annealing; Semiconductor process modeling; Zinc;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570937
