Title :
Thermal-structural coupled analysis in a 3-DOF accelerometer
Author :
Tan, T.D. ; Roy, Sandip ; Long, N.T. ; Tue, H.H. ; Thuy, N.P.
Author_Institution :
Fac. of Electron. & Telecommun., VNU
Abstract :
The rapid progress in microsystems technology is increasingly supported by various modeling methodologies and simulation tools. A coupled-field analysis procedure is established to analyze a multi-degree of freedom accelerometer. The proposed sensor dimensions are 1.5times1.5times0.5 mm3 (LtimesWtimesT) and the beam size is 950times80times10 mum3 (LtimesWtimesT). The effect of electrical heating in a silicon MEMS piezoresistive acceleration sensor has been analyzed. This analysis is necessary to control the internal power dissipation, predict the voltage output and optimize the mechanical parameters.
Keywords :
accelerometers; microsensors; 3-DOF accelerometer; coupled field analysis; electrical heating; freedom accelerometer; internal power dissipation; mechanical parameters; microsystems technology; thermal structural coupled analysis; Acceleration; Accelerometers; Mechanical sensors; Micromechanical devices; Piezoresistance; Power dissipation; Resistance heating; Silicon; Thermal sensors; Voltage control; FEM; MEMS; coupled-field analysis; piezoresistive;
Conference_Titel :
Advanced Technologies for Communications, 2008. ATC 2008. International Conference on
Conference_Location :
Hanoi
Print_ISBN :
978-1-4244-2680-5
Electronic_ISBN :
978-1-4244-2681-2
DOI :
10.1109/ATC.2008.4760589
