Thermal-structural coupled analysis in a 3-DOF accelerometer

Author

Tan, T.D. ; Roy, Sandip ; Long, N.T. ; Tue, H.H. ; Thuy, N.P.

Author_Institution

Fac. of Electron. & Telecommun., VNU

fYear

2008

fDate

6-9 Oct. 2008

Firstpage

331

Lastpage

334

Abstract

The rapid progress in microsystems technology is increasingly supported by various modeling methodologies and simulation tools. A coupled-field analysis procedure is established to analyze a multi-degree of freedom accelerometer. The proposed sensor dimensions are 1.5times1.5times0.5 mm³ (LtimesWtimesT) and the beam size is 950times80times10 mum³ (LtimesWtimesT). The effect of electrical heating in a silicon MEMS piezoresistive acceleration sensor has been analyzed. This analysis is necessary to control the internal power dissipation, predict the voltage output and optimize the mechanical parameters.

Keywords

accelerometers; microsensors; 3-DOF accelerometer; coupled field analysis; electrical heating; freedom accelerometer; internal power dissipation; mechanical parameters; microsystems technology; thermal structural coupled analysis; Acceleration; Accelerometers; Mechanical sensors; Micromechanical devices; Piezoresistance; Power dissipation; Resistance heating; Silicon; Thermal sensors; Voltage control; FEM; MEMS; coupled-field analysis; piezoresistive;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Technologies for Communications, 2008. ATC 2008. International Conference on

Conference_Location

Hanoi

Print_ISBN

978-1-4244-2680-5

Electronic_ISBN

978-1-4244-2681-2

Type

conf

DOI

10.1109/ATC.2008.4760589

Filename

4760589